GaN EPI Wafer

GaN Process Wafer

GaN FET

先進鍍膜技術

  • 氮化鎵磊晶片|GaN EPI Wafer
圖片P/NSizeBarrier Layer AL CompositionFWHM (0002) ArcsecTotal EPI Thickness (nm)Wafer Bowing (um)Particle Count (ea)PDF
000S06EP01
6" EPI
0.20~0.25±0.02
~750
4200 ±10%
+/-50um
~500
000S08EP01
8" EPI
0.20~0.25 ±0.02
~750
4200 ±10%
+/-80um
~500
  • 氮化鎵芯片|GaN Process Wafer
圖片P/NSizeX(μm)Y(μm)Rds(on) Typ. (mΩ)Ids(max.) (A)PDF
245S06PM01
6" Wafer
1300
2050
220mΩ
9A
130S06PM01
6" Wafer
2000
2800
120mΩ
18A
  • GaN FET
FigureP/NConfigurationVDS(V)RDS(on) (mΩ)IDS(max) (A)PackageStatusDatasheet
GPT65Z3YMR
Cascode
650V
245mΩ
9A
DFN8080
Mass Production
GPT65Z4YMR
Cascode
650V
130mΩ
18A
DFN8080
Mass Production
GPT65Z4WMR
Cascode
650V
130mΩ
23A
TO220
Small Volume Production
GPT65Z6YMR
Cascode
650V
245mΩ
8A
DFN5060
Small Volume Production